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Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors.
- Source :
- Applied Physics Letters; 1/11/2016, Vol. 108 Issue 2, p1-4, 4p, 1 Diagram, 4 Graphs
- Publication Year :
- 2016
-
Abstract
- Conventional junctionless (JL) multi-gate (MuG) field-effect transistors(FETs) require extremely scaled channels to deliver high on-state current with low short-channel effect related leakage. In this letter, using ultra-thin 2D materials (e.g., monolayer MoS<subscript>2</subscript>), we present comparison of short-channel effects in JL, and inversion-mode (IM) FETs. We show that JL FETs exhibit better sub-threshold slope (S.S.) and drain-induced-barrier-lowering (DIBL) in comparison to IM FETs due to reduced peak electric field at the junctions. But, threshold voltage (V<subscript>T</subscript>) roll-off with channel length downscaling is found to be significantly higher in JL FETs than IM FETs, due to higher source/drain controlled charges (dE/dx) in the channel. Further, we show that although V<subscript>T</subscript> roll-off in JL FETs improves by increasing the gate control, i.e., by scaling the oxide, or channel thickness, the sensitivity of threshold voltage on structural parameters is found out to be high. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 108
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 112326516
- Full Text :
- https://doi.org/10.1063/1.4939933