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Efficient silicon quantum dots light emitting diodes with an inverted device structure.
- Source :
- Journal of Materials Chemistry C; 1/28/2016, Vol. 4 Issue 4, p673-677, 5p
- Publication Year :
- 2016
-
Abstract
- We use silicon quantum dots (SiQDs) with an average diameter of 2.6 ± 0.5 nm as the light emitting material and fabricate inverted structure light emitting diodes (SiQD-LEDs) with bottom cathodes. ZnO nanoparticles with high electron mobility, a deep valence band edge, and robust features to resist dissolving by the SiQD solvent were used as the electron transport layer. 1,1-Bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) with high hole transport mobility and a high lowest unoccupied molecular orbital level was used as the hole transport layer. Poly(ethylene imine) (PEI) modified indium-tin oxide (ITO) was used as the low work function (∼3.1 eV) cathode and MoO<subscript>3</subscript>/Al as the high work function anode. Electroluminescence of the SiQD-LEDs is mainly from the SiQDs with a peak located at ∼700 nm. The maximum external quantum efficiencies of the SiQD-LEDs are 2.7%. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20507526
- Volume :
- 4
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Materials Chemistry C
- Publication Type :
- Academic Journal
- Accession number :
- 112425680
- Full Text :
- https://doi.org/10.1039/c5tc03064a