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Top-gated field-effect LaAlO3/SrTiO3 devices made by ion-irradiation.
- Source :
- Applied Physics Letters; 2/1/2016, Vol. 108 Issue 5, p1-5, 5p, 2 Color Photographs, 2 Graphs
- Publication Year :
- 2016
-
Abstract
- We present a method to fabricate top-gated field-effect devices in a LaAlO<subscript>3</subscript>/SrTiO<subscript>3</subscript> two-dimensional electron gas (2-DEG). Prior to the gate deposition, the realisation of micron size conducting channels in the 2-DEG is achieved by an ion-irradiation with high-energy oxygen ions. After identifying the ion fluence as the key parameter that determines the electrical transport properties of the channels, we demonstrate the field-effect operation. At low temperature, the normal state resistance and the superconducting Tc can be tuned over a wide range by a top-gate voltage without any leakage. A superconductor-to-insulator quantum phase transition is observed for a strong depletion of the 2-DEG. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 108
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 112847527
- Full Text :
- https://doi.org/10.1063/1.4941672