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Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT.
- Source :
- IEEE Electron Device Letters; Mar2016, Vol. 37 Issue 3, p265-268, 4p
- Publication Year :
- 2016
-
Abstract
- In this letter, we demonstrate an integrated process that illustrates the compatibility of AlN/SiNx passivation with high-performance (i.e. low leakage and high breakdown) low-pressure chemical vapor deposition (LPCVD) SiNx gate dielectric for GaN-based MIS-HEMT. It is shown that the AlN/SiNx passivation structure maintains its superior capability of suppressing the current collapse after enduring high temperature of 780 °C during the LPCVD-SiNx deposition. The AlN/SiNx passivation is shown to be significantly better than the LPCVD-SiNx passivation by delivering small dynamic $R_{{\mathrm{\scriptscriptstyle ON}}}$ degradation, especially under high drain bias switching with $V_{{\mathrm{DS}}} > 100$ V. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 37
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 113411165
- Full Text :
- https://doi.org/10.1109/LED.2016.2519680