4H-SiC n-Channel Insulated Gate Bipolar Transistors on (0001) and (000-1) Oriented Free-Standing n− Substrates.

We experimentally demonstrate 4H-SiC n-channel, planar gate insulated gate bipolar transistors (IGBTs) on 180- \mu \textm thick lightly doped free-standing n− substrates with ion-implanted collector regions, and metal–oxide–semiconductor gates on (0001) and (000-1) surfaces. The IGBTs show an ON-state current density of 20 A/cm2 at a power dissipation of 300 W/cm2. The threshold voltages are measured to be 7.5 V and 10.5 V on Si-face and C-face, respectively. Both IGBTs show a small positive temperature coefficient of the forward voltage drop, which is useful for easy parallelization of devices. [ABSTRACT FROM PUBLISHER]