Dynamic Current—Voltage Characteristics of III-N HFETs.

A comparative study of the dynamic current-voltage (DI-V) characteristics of III-N heterojunction and double heterojunction field-effect transistors (HFETs and DHFETs) reveals that the current and RF power collapse in HFETs arise from modulation of device series resistances under large input signal. The model based on space-charge limited current through the depletion regions formed at the gate edges due to the charge trapping explains the DI-V behavior and other observations related to the RF current collapse in III-N HFETs. [ABSTRACT FROM AUTHOR]