Cite
Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier.
MLA
Chien, Diana, et al. “Enhanced Voltage-Controlled Magnetic Anisotropy in Magnetic Tunnel Junctions with an MgO/PZT/MgO Tunnel Barrier.” Applied Physics Letters, vol. 108, no. 11, Mar. 2016, pp. 1–5. EBSCOhost, https://doi.org/10.1063/1.4943023.
APA
Chien, D., Xiang Li, Kin Wong, Zurbuchen, M. A., Robbennolt, S., Guoqiang Yu, Tolbert, S., Kioussis, N., Amiri, P. K., Kang L. Wang, & Chang, J. P. (2016). Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier. Applied Physics Letters, 108(11), 1–5. https://doi.org/10.1063/1.4943023
Chicago
Chien, Diana, Xiang Li, Kin Wong, Mark A. Zurbuchen, Shauna Robbennolt, Guoqiang Yu, Sarah Tolbert, et al. 2016. “Enhanced Voltage-Controlled Magnetic Anisotropy in Magnetic Tunnel Junctions with an MgO/PZT/MgO Tunnel Barrier.” Applied Physics Letters 108 (11): 1–5. doi:10.1063/1.4943023.