Hybrid quantum dot-tin disulfide field-effect transistors with improved photocurrent and spectral responsivity.

MLA

Yuan Huang, et al. “Hybrid Quantum Dot-Tin Disulfide Field-Effect Transistors with Improved Photocurrent and Spectral Responsivity.” Applied Physics Letters, vol. 108, no. 12, Mar. 2016, pp. 123502-1-123502–05. EBSCOhost, https://doi.org/10.1063/1.4944781.

APA

Yuan Huang, Huidong Zang, Jia-Shiang Chen, Sutter, E. A., Sutter, P. W., Chang-Yong Nam, & Cotlet, M. (2016). Hybrid quantum dot-tin disulfide field-effect transistors with improved photocurrent and spectral responsivity. Applied Physics Letters, 108(12), 123502-1-123502–123505. https://doi.org/10.1063/1.4944781

Chicago

Yuan Huang, Huidong Zang, Jia-Shiang Chen, Eli A. Sutter, Peter W. Sutter, Chang-Yong Nam, and Mircea Cotlet. 2016. “Hybrid Quantum Dot-Tin Disulfide Field-Effect Transistors with Improved Photocurrent and Spectral Responsivity.” Applied Physics Letters 108 (12): 123502-1-123502–5. doi:10.1063/1.4944781.