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Low-Power Double-Gate ZnO TFT Active Rectifier.
- Source :
- IEEE Electron Device Letters; Apr2016, Vol. 37 Issue 4, p426-428, 3p
- Publication Year :
- 2016
-
Abstract
- This letter reports a low-power full-wave active rectifier using double-gate ZnO thin-film transistors (TFTs). The active rectifier is designed to operate at low voltage and low power to allow integration with mechanical energy harvesters. Double-gate TFTs allow the TFT threshold voltage to be tuned and enable enhancement/depletion-mode circuits with high gain and low power consumption. The active rectifier is designed to work with input voltage as small as 200-mV peak-to-peak and frequencies up to 4 Hz. The active rectifier circuit includes 12 TFTs and operates with a power consumption <150 nW. The low fabrication temperature for the active rectifier circuit allows direct and distributed integration with micro-electromechanical energy harvesters. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 37
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 114035574
- Full Text :
- https://doi.org/10.1109/LED.2016.2527832