Performance trade-off for the Insulated Gate Bipolar Transistor: Buffer layer versus base lifetime reduction.

Details

Language :

English

ISBNs :

9789996323270

Database :

Complementary Index

Journal :

1986 17th Annual IEEE Power Electronics Specialists Conference

Publication Type :

Conference

Accession number :

114301465

Full Text :

https://doi.org/10.1109/PESC.1986.7415543