First monolithic integration of Ge P-FETs and InAs N-FETs on silicon substrate: Sub-120 nm III-V buffer, sub-5 nm ultra-thin body, common raised S/D, and gate stack modules.

Details

Language :

English

ISBNs :

9781467398947

Database :

Complementary Index

Journal :

2015 IEEE International Electron Devices Meeting (IEDM)

Publication Type :

Conference

Accession number :

114303503

Full Text :

https://doi.org/10.1109/IEDM.2015.7409612