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Toward reliable MIS- and MOS-gate structures for GaN lateral power devices.
- Source :
- Physica Status Solidi. A: Applications & Materials Science; Apr2016, Vol. 213 Issue 4, p861-867, 7p
- Publication Year :
- 2016
-
Abstract
- GaN power switching transistors featuring MIS- and MOS-gate structures are highly preferred over the Schottky-gate counterpart, because of suppressed gate leakage, enlarged gate swing, and more scalable threshold voltage. Nevertheless, MIS-/MOS-gate GaN devices are confronted with stability and reliability challenges, which arise from interface traps at the critical dielectric/III-nitride interface, as well as bulk traps inside the gate dielectric including border traps near the critical interface. In this work, we present several key techniques toward reliable MIS-/MOS-gate GaN power devices, including advanced interface engineering technology, gate structure optimizations for high-performance/stability normally-off GaN power transistors, and long-lifetime gate dielectric technology. Schematic cross sections of GaN-based MIS-HEMT and MOS-channel-HEMT. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18626300
- Volume :
- 213
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Physica Status Solidi. A: Applications & Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 114490732
- Full Text :
- https://doi.org/10.1002/pssa.201532873