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Microstructure and lateral conductivity control of hydrogenated nanocrystalline silicon oxide and its application in a-Si:H/a-SiGe:H tandem solar cells.
- Source :
- Chinese Physics B; Apr2016, Vol. 25 Issue 4, p1-1, 1p
- Publication Year :
- 2016
-
Abstract
- Phosphorous-doped hydrogenated nanocrystalline silicon oxide (n-nc-SiO<subscript>x</subscript>:H) films are prepared via radio frequency plasma enhanced chemical vapor deposition (RF-PECVD). Increasing deposition power during n-nc-SiO<subscript>x</subscript>:H film growth process can enhance the formation of nanocrystalline and obtain a uniform microstructure of n-nc-SiO<subscript>x</subscript>:H film. In addition, in 20s interval before increasing the deposition power, high density small grains are formed in amorphous SiO<subscript>x</subscript> matrix with higher crystalline volume fraction (I<subscript>c</subscript>) and have a lower lateral conductivity. This uniform microstructure indicates that the higher I<subscript>c</subscript> can leads to better vertical conductivity, lower refractive index, wider optical band-gap. It improves the back reflection in a-Si:H/a-SiGe:H tandem solar cells acting as an n-nc-SiO<subscript>x</subscript>:H back reflector prepared by the gradient power during deposition. Compared with the sample with SiO<subscript>x</subscript> back reflector, with a constant power used in deposition process, the sample with gradient power SiO<subscript>x</subscript> back reflector can enhance the total short-circuit current density (J<subscript>sc</subscript>) and the initial efficiency of a-Si:H/a-SiGe:H tandem solar cells by 8.3% and 15.5%, respectively. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 16741056
- Volume :
- 25
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Chinese Physics B
- Publication Type :
- Academic Journal
- Accession number :
- 114507068
- Full Text :
- https://doi.org/10.1088/1674-1056/25/4/046101