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Prediction of silicon-based room temperature quantum spin Hall insulator via orbital mixing.
- Source :
- Europhysics Letters; Mar2016, Vol. 113 Issue 6, p1-1, 1p
- Publication Year :
- 2016
-
Abstract
- The search for realistic materials capable of supporting the room temperature quantum spin Hall (QSH) effect remains a challenge, especially when compatibility with the current electronics industry is required. We report a theoretical prediction to identify halogenated silicon films as excellent candidates, which demonstrate high stability, flexibility, and tunable spin-orbit coupling (SOC) gaps up to ∼0.5 eV under minimal strain below 3%. The extraordinary SOC strength is mainly contributed by the p-orbital of heavy halogen atoms hybridized with the p<subscript>x,y</subscript>-orbitals of Si scaffold, and thus can be easily manipulated by strain (being ∼100 times more effective than in silicene) or substrate. Not only the instability problem of silicene for real applications is solved, but also it provides a new strategy to drastically enhance SOC of light-element scaffolds by orbital hybridization. The silicon-based QSH insulator is most promising for developing next-generation, low-power consumption nanoelectronics and spintronics at ambient conditions. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02955075
- Volume :
- 113
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Europhysics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 114593891
- Full Text :
- https://doi.org/10.1209/0295-5075/113/67003