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Impact of Surface Passivation on the Dynamic ON-Resistance of Proton-Irradiated AlGaN/GaN HEMTs.
- Source :
- IEEE Electron Device Letters; May2016, Vol. 37 Issue 5, p545-548, 4p
- Publication Year :
- 2016
-
Abstract
- Radiation tolerance of AlGaN/GaN high-electron mobility transistors (HEMTs) is studied with 2-MeV protons, up to a fluence of 6 \times 10^14 H+/cm2 (about 200 times of typical Si MOSFET rating). The increase in dynamic ON-resistance ( $R_{{\textit{ONDYN}}})$ after radiation is observed to be much more severe than that of static ON-resistance. Radiation-induced donorlike traps located near the two-dimensional electron gas trap electrons, which is responsible for the phenomenon. Compared with the devices passivated by conventional plasma-enhanced chemical vapor deposition (PECVD) SiN, GaN HEMTs with 10 nm of in situ SiN before the PECVD SiN step demonstrate much less increase in $R_{{\textit{ONDYN}}}$ from 2300% to only 300%. The in situ SiN is believed to reduce the process damage by PECVD, improving radiation tolerance. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 37
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 114848372
- Full Text :
- https://doi.org/10.1109/LED.2016.2537050