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The Properties of p-GaN with Different CpMg/Ga Ratios and Their Influence on Conductivity.

Authors :
Shang, Lin
Ma, Shufang
Liang, Jian
Li, Tianbao
Yu, Chunyan
Liu, Xuguang
Xu, Bingshe
Source :
Journal of Electronic Materials; Jun2016, Vol. 45 Issue 6, p2697-2701, 5p, 1 Color Photograph, 1 Diagram, 3 Graphs
Publication Year :
2016

Abstract

The effect of CpMg/Ga ratio on the properties of p-GaN was explored by scanning Hall probe, photoluminescence (PL), and atomic force microscopy measurement. It was found that p-GaN has an optimal doping concentration under 2% CpMg/Ga ratio, and higher or lower doping concentration is not beneficial to the conductivity. Hole concentration under the optimum condition is 4.2 × 10 cm at room temperature. If the CpMg/Ga ratio exceeds the optimum value of 2%, surface morphology and electrical conduction properties become poor, and blue emission at 440 nm, considered deep donor-to-acceptor pair transitions in the PL spectra, are dominant. The decrease in electrical properties indicates the existence of compensating donors because the hole concentration decreases at such high CpMg/Ga ratio. The obtained results indicate that Mg is not incorporated in the exact acceptor site under a heavy doping condition, but acts as a deep donor, instead. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
03615235
Volume :
45
Issue :
6
Database :
Complementary Index
Journal :
Journal of Electronic Materials
Publication Type :
Academic Journal
Accession number :
114885520
Full Text :
https://doi.org/10.1007/s11664-016-4446-0