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Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures.
- Source :
- Journal of Applied Physics; 4/28/2016, Vol. 119 Issue 16, p1-6, 6p, 1 Diagram, 1 Chart, 8 Graphs
- Publication Year :
- 2016
-
Abstract
- The impact of proton irradiation on the threshold voltage (V<subscript>T</subscript>) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of V<subscript>T</subscript> was found to increase monotonically as a function of 1.8MeV proton fluence in a sub-linear manner reaching 0.63V at a fluence of 1×10<superscript>14</superscript> cm<superscript>-2</superscript>. Silvaco Atlas simulations of V<subscript>T</subscript> shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different V<subscript>T</subscript> dependences on proton irradiation, confirming that deep, acceptorlike defects in the GaN buffer are primarily responsible for the observed V<subscript>T</subscript> shifts. The proton irradiation induced V<subscript>T</subscript> shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 119
- Issue :
- 16
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 115043057
- Full Text :
- https://doi.org/10.1063/1.4948298