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Avalanche Microwave Noise Sources in Commercial 90-nm CMOS Technology.
- Source :
- IEEE Transactions on Microwave Theory & Techniques; May2016, Vol. 64 Issue 5, p1409-1418, 10p
- Publication Year :
- 2016
-
Abstract
- This paper presents a microwave noise source implemented in a commercial CMOS technology. The circuit is based on the avalanche noise generated by both the source-to-bulk and the drain-to-bulk junctions in reverse breakdown. Two sources of different junction area are fabricated using a standard NMOS transistor in 90-nm CMOS technology having a width of 5- and 20- \mu \text m , respectively. From the experimental characterization emerges that the breakdown voltage of the source/drain to bulk diodes is 12.4 V, whereas excess noise ratios (ENRs) of 20 dB (5- \mu \text m source) and of 25 dB (20- \mu \text m source) are observed at 24 GHz for a current density of about 0.14 mA per square micrometer. Finally, a theoretical explanation of the observed behaviors is proposed by means of an equivalent circuit. The developed noise source can be used in a CMOS system-on-chip (SoC) for a variety of applications ranging from the built-in self test (BIST) of the RF chain to the calibration of fully integrated microwave radiometric sensor. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189480
- Volume :
- 64
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Microwave Theory & Techniques
- Publication Type :
- Academic Journal
- Accession number :
- 115293873
- Full Text :
- https://doi.org/10.1109/TMTT.2016.2549522