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Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET.
- Source :
- IEEE Electron Device Letters; Jun2016, Vol. 37 Issue 6, p705-708, 4p
- Publication Year :
- 2016
-
Abstract
- A metal nitride-interlayer-semiconductor source/drain (MN-I-S S/D) model is newly proposed to investigate the effect of tantalum nitride (TaN) on the specific contact resistivity ( \rho c ) of an MN-I-S S/D with an undoped interlayer (undoped-IL) or a heavily doped IL (n+-IL) in sub-10-nm n-type Ge FinFETs. In this model, the workfunction variation of TaN was considered following the Rayleigh distribution. Compared with MN-I-S structures with an undoped-IL, structures with an n+-IL generate much lower \rho c values (i.e., $\sim 2 \times 10^{{\mathbf {-9}}}\Omega \cdot \text {cm}^{2}$ ) and are less prone to variation. In addition, the impact of \rho c variation on device performance is investigated using 3-D technology computer aided design simulation for undoped or heavily doped ILs in MN-I-S S/D structures. MN-I-S S/Ds with an n+-IL can achieve much lower current variation and a higher ON-state drive current. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 37
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 115559186
- Full Text :
- https://doi.org/10.1109/LED.2016.2553132