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Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications.
- Source :
- IEEE Transactions on Electron Devices; Jun2016, Vol. 63 Issue 6, p2469-2473, 5p
- Publication Year :
- 2016
-
Abstract
- A GaN/SiC hybrid field-effect transistor (HyFET) is proposed as a high-voltage power device that provides a high-mobility lateral AlGaN/GaN channel to reduce the channel resistance and a vertical SiC drift region to sustain the high OFF-state voltage. The performance of the HyFET is evaluated by numerical device simulations. Compared with the conventional SiC MOSFET, the HyFET exhibits a greatly reduced R\mathrm{\scriptscriptstyle ON} together with a low C\mathrm{ GD} and low gate charges. The figures of merit Q\mathrm{ G}\times R\mathrm{\scriptscriptstyle ON} and Q\mathrm{ GD}\times R\mathrm{\scriptscriptstyle ON} of the HyFET are dramatically improved. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 63
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 115559782
- Full Text :
- https://doi.org/10.1109/TED.2016.2557811