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Sub-bandgap photonic gated-diode method for extracting distributions of interface states in MOSFETs.
- Source :
- Electronics Letters (Institution of Engineering & Technology); 11/27/2003, Vol. 39 Issue 24, p1761-1763, 3p
- Publication Year :
- 2003
-
Abstract
- A new sub-bandgap photonic gated-diode method is proposed to extract the energy-dependent and spatial distributions of traps at the SiO2=Si interface in MOSFETs. For the photonic current-voltage (I-V ) characterisation of MOSFETs, an optical source with a sub-bandgap photon energy less than the silicon bandgap (E[SUPph] = 0.95 eV < E[SUPg] = 1.12 eV) is employed for the characterisation of interface states (D[SUPit]) distributed in the photo-responsive energy band (E[SUBC]-0.95≤E[SUBu]≤E[SUBC]) in MOS systems with a polysilicon gate. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 39
- Issue :
- 24
- Database :
- Complementary Index
- Journal :
- Electronics Letters (Institution of Engineering & Technology)
- Publication Type :
- Academic Journal
- Accession number :
- 11589318
- Full Text :
- https://doi.org/10.1049/el:20031080