Sub-bandgap photonic gated-diode method for extracting distributions of interface states in MOSFETs.

Authors :: Chi, S. S.
Kim, H. T.
Kim, M. S.
Kim, T. E.
Shin, H. T.
Park, H. S.
Kim, K. H.
Kim, K. S.
Nam, I. C.
Kim, D. J.
Min, K. S.
Kang, D. W.
Kim, D. M.
Source :: Electronics Letters (Institution of Engineering & Technology); 11/27/2003, Vol. 39 Issue 24, p1761-1763, 3p
Publication Year :: 2003
Abstract: A new sub-bandgap photonic gated-diode method is proposed to extract the energy-dependent and spatial distributions of traps at the SiO2=Si interface in MOSFETs. For the photonic current-voltage (I-V ) characterisation of MOSFETs, an optical source with a sub-bandgap photon energy less than the silicon bandgap (E[SUPph] = 0.95 eV < E[SUPg] = 1.12 eV) is employed for the characterisation of interface states (D[SUPit]) distributed in the photo-responsive energy band (E[SUBC]-0.95≤E[SUBu]≤E[SUBC]) in MOS systems with a polysilicon gate. [ABSTRACT FROM AUTHOR]

Subjects :: DIODES
METAL oxide semiconductor field-effect transistors
PHOTONS
ENERGY bands
SILICA

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