Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.

Details

Language :

English

ISSN :

20452322

Database :

Complementary Index

Journal :

Scientific Reports

Publication Type :

Academic Journal

Accession number :

116096743

Full Text :

https://doi.org/10.1038/srep27676