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Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.
- Source :
- Scientific Reports; 6/10/2016, p27676, 1p
- Publication Year :
- 2016
Details
- Language :
- English
- ISSN :
- 20452322
- Database :
- Complementary Index
- Journal :
- Scientific Reports
- Publication Type :
- Academic Journal
- Accession number :
- 116096743
- Full Text :
- https://doi.org/10.1038/srep27676