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A Fully Integrated Bluetooth Low-Energy Transmitter in 28 nm CMOS With 36% System Efficiency at 3 dBm.

Authors :
Babaie, Masoud
Kuo, Feng-Wei
Chen, Huan-Neng Ron
Cho, Lan-Chou
Jou, Chewn-Pu
Hsueh, Fu-Lung
Shahmohammadi, Mina
Staszewski, Robert Bogdan
Source :
IEEE Journal of Solid-State Circuits; Jul2016, Vol. 51 Issue 7, p1547-1565, 19p
Publication Year :
2016

Abstract

We propose a new transmitter architecture for ultra-low power radios in which the most energy-hungry RF circuits operate at a supply just above a threshold voltage of CMOS transistors. An all-digital PLL employs a digitally controlled oscillator with switching current sources to reduce supply voltage and power without sacrificing its startup margin. It also reduces 1/f noise and supply pushing, thus allowing the ADPLL, after settling, to reduce its sampling rate or shut it off entirely during a direct DCO data modulation. The switching power amplifier integrates its matching network while operating in class-E/F2 to maximally enhance its efficiency at low voltage. The transmitter is realized in 28 nm digital CMOS and satisfies all metal density and other manufacturing rules. It consumes 3.6 mW/5.5 mW while delivering 0 dBm/3 dBm RF power in Bluetooth Low-Energy mode. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISSN :
00189200
Volume :
51
Issue :
7
Database :
Complementary Index
Journal :
IEEE Journal of Solid-State Circuits
Publication Type :
Academic Journal
Accession number :
116436291
Full Text :
https://doi.org/10.1109/JSSC.2016.2551738