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A Fully Integrated Bluetooth Low-Energy Transmitter in 28 nm CMOS With 36% System Efficiency at 3 dBm.
- Source :
- IEEE Journal of Solid-State Circuits; Jul2016, Vol. 51 Issue 7, p1547-1565, 19p
- Publication Year :
- 2016
-
Abstract
- We propose a new transmitter architecture for ultra-low power radios in which the most energy-hungry RF circuits operate at a supply just above a threshold voltage of CMOS transistors. An all-digital PLL employs a digitally controlled oscillator with switching current sources to reduce supply voltage and power without sacrificing its startup margin. It also reduces 1/f noise and supply pushing, thus allowing the ADPLL, after settling, to reduce its sampling rate or shut it off entirely during a direct DCO data modulation. The switching power amplifier integrates its matching network while operating in class-E/F2 to maximally enhance its efficiency at low voltage. The transmitter is realized in 28 nm digital CMOS and satisfies all metal density and other manufacturing rules. It consumes 3.6 mW/5.5 mW while delivering 0 dBm/3 dBm RF power in Bluetooth Low-Energy mode. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189200
- Volume :
- 51
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- IEEE Journal of Solid-State Circuits
- Publication Type :
- Academic Journal
- Accession number :
- 116436291
- Full Text :
- https://doi.org/10.1109/JSSC.2016.2551738