Formation of n+/p junctions less than 20 nm deep in Ge and diffusion control by Flash Lamp Annealing (FLA).

Details

Language :

English

ISBNs :

9784863485174

Database :

Complementary Index

Journal :

2015 15th International Workshop on Junction Technology (IWJT)

Publication Type :

Conference

Accession number :

116438796

Full Text :

https://doi.org/10.1109/IWJT.2015.7467067