Cite
Investigation of the trade-off between switching losses and EMI generation in Gaussian S-shaping for high-power IGBT switching transients by active voltage control.
MLA
Xin Yang, et al. “Investigation of the Trade-off between Switching Losses and EMI Generation in Gaussian S-Shaping for High-Power IGBT Switching Transients by Active Voltage Control.” IET Power Electronics (Wiley-Blackwell), vol. 9, no. 9, Sept. 2016, pp. 1979–84. EBSCOhost, https://doi.org/10.1049/iet-pel.2015.1035.
APA
Xin Yang, Zhiqiang Long, Yanhui Wen, Haokai Huang, & Palmer, P. R. (2016). Investigation of the trade-off between switching losses and EMI generation in Gaussian S-shaping for high-power IGBT switching transients by active voltage control. IET Power Electronics (Wiley-Blackwell), 9(9), 1979–1984. https://doi.org/10.1049/iet-pel.2015.1035
Chicago
Xin Yang, Zhiqiang Long, Yanhui Wen, Haokai Huang, and Patrick R. Palmer. 2016. “Investigation of the Trade-off between Switching Losses and EMI Generation in Gaussian S-Shaping for High-Power IGBT Switching Transients by Active Voltage Control.” IET Power Electronics (Wiley-Blackwell) 9 (9): 1979–84. doi:10.1049/iet-pel.2015.1035.