Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si.

Authors :: Lee, S.W.
Chen, L.J.
Chen, P.S.
Tsai, M.-J.
Liu, C.W.
Chien, T.Y.
Chia, C.T.
Source :: Applied Physics Letters; 12/22/2003, Vol. 83 Issue 25, p5283-5285, 3p, 2 Diagrams, 3 Graphs
Publication Year :: 2003
Abstract: Nanorings with an average height and diameter of 1.2 and 65 nm, respectively, were observed to form in Si-capped Ge quantum dots grown at 600 °C by ultrahigh-vacuum chemical vapor deposition. The nanorings were captured with the rapid cooling of the samples with appropriate amount of Si capping. Based on the results of transmission electron microscopy and Raman spectroscopy, the formation of nanorings is attributed to alloying and strain relief in the Si/Ge/(001)Si system. The self-assembly of nanorings provides a useful scheme to form ultrasmall ring-like structure and facilitates the characterization of the physical properties of unconventional quantum structures. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]