Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design.

Details

Language :

English

ISSN :

20452322

Database :

Complementary Index

Journal :

Scientific Reports

Publication Type :

Academic Journal

Accession number :

117298372

Full Text :

https://doi.org/10.1038/srep30775