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Solid-Vapor Reaction Growth of Transition-Metal Dichalcogenide Monolayers.
- Source :
- Angewandte Chemie International Edition; 8/26/2016, Vol. 55 Issue 36, p10656-10661, 6p
- Publication Year :
- 2016
-
Abstract
- Two-dimensional (2D) layered semiconducting transition-metal dichalcogenides (TMDCs) are promising candidates for next-generation ultrathin, flexible, and transparent electronics. Chemical vapor deposition (CVD) is a promising method for their controllable, scalable synthesis but the growth mechanism is poorly understood. Herein, we present systematic studies to understand the CVD growth mechanism of monolayer MoSe<subscript>2</subscript>, showing reaction pathways for growth from solid and vapor precursors. Examination of metastable nanoparticles deposited on the substrate during growth shows intermediate growth stages and conversion of non-stoichiometric nanoparticles into stoichiometric 2D MoSe<subscript>2</subscript> monolayers. The growth steps involve the evaporation and reduction of MoO<subscript>3</subscript> solid precursors to sub-oxides and stepwise reactions with Se vapor to finally form MoSe<subscript>2</subscript>. The experimental results and proposed model were corroborated by ab initio Car-Parrinello molecular dynamics studies. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 14337851
- Volume :
- 55
- Issue :
- 36
- Database :
- Complementary Index
- Journal :
- Angewandte Chemie International Edition
- Publication Type :
- Academic Journal
- Accession number :
- 117630710
- Full Text :
- https://doi.org/10.1002/anie.201604445