Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications.

MLA

Stolyarov, Maxim A., et al. “Breakdown Current Density in H-BN-Capped Quasi-1D TaSe3 Metallic Nanowires: Prospects of Interconnect Applications.” Nanoscale, vol. 8, no. 34, Sept. 2016, pp. 15774–82. EBSCOhost, https://doi.org/10.1039/c6nr03469a.

APA

Stolyarov, M. A., Liu, G., Bloodgood, M. A., Aytan, E., Jiang, C., Samnakay, R., Salguero, T. T., Nika, D. L., Rumyantsev, S. L., Shur, M. S., Bozhilov, K. N., & Balandin, A. A. (2016). Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications. Nanoscale, 8(34), 15774–15782. https://doi.org/10.1039/c6nr03469a

Chicago

Stolyarov, Maxim A., Guanxiong Liu, Matthew A. Bloodgood, Ece Aytan, Chenglong Jiang, Rameez Samnakay, Tina T. Salguero, et al. 2016. “Breakdown Current Density in H-BN-Capped Quasi-1D TaSe3 Metallic Nanowires: Prospects of Interconnect Applications.” Nanoscale 8 (34): 15774–82. doi:10.1039/c6nr03469a.