High-Sensitivity Floating-Gate Phototransistors Based on WS2 and MoS2.

MLA

Gong, Fan, et al. “High-Sensitivity Floating-Gate Phototransistors Based on WS2 and MoS2.” Advanced Functional Materials, vol. 26, no. 33, Sept. 2016, pp. 6084–90. EBSCOhost, https://doi.org/10.1002/adfm.201601346.

APA

Gong, F., Luo, W., Wang, J., Wang, P., Fang, H., Zheng, D., Guo, N., Wang, J., Luo, M., Ho, J. C., Chen, X., Lu, W., Liao, L., & Hu, W. (2016). High-Sensitivity Floating-Gate Phototransistors Based on WS2 and MoS2. Advanced Functional Materials, 26(33), 6084–6090. https://doi.org/10.1002/adfm.201601346

Chicago

Gong, Fan, Wenjin Luo, Jianlu Wang, Peng Wang, Hehai Fang, Dingshan Zheng, Nan Guo, et al. 2016. “High-Sensitivity Floating-Gate Phototransistors Based on WS2 and MoS2.” Advanced Functional Materials 26 (33): 6084–90. doi:10.1002/adfm.201601346.