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The continuum state in photoluminescence of type-II In0.46Al0.54As/ Al0.54Ga0.46As quantum dots.

Authors :
Linlin Su
Baolai Liang
Ying Wang
Qinglin Guo
Xiaowei Li
Shufang Wang
Guangsheng Fu
Mazur, Yuriy I.
Ware, Morgan E.
Salamo, Gregory J.
Source :
Applied Physics Letters; 10/31//2016, Vol. 109 Issue 18, p183103-1-183103-5, 5p, 5 Graphs
Publication Year :
2016

Abstract

The continuum state associated with type-II In<subscript>0.46</subscript>Al<subscript>0.54</subscript>As/Al<subscript>0.54</subscript>Ga<subscript>0.46</subscript>As quantum dots (QDs) is investigated. Emission from the continuum states of the QDs is directly observed in photoluminescence (PL) spectra. The PL excitation and time-resolved PL spectra reveal an efficient carrier relaxation from the AlGaAs barrier into the InAlAs QD ground state via the continuum states. The temperature dependence of the PL spectra shows a decreasing PL linewidth and a strong redshift of the peak energy at low temperature, indicating that carriers are redistributed through the continuum states by thermal activation and lateral transfer. Published by AIP Publishing. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
109
Issue :
18
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
119275195
Full Text :
https://doi.org/10.1063/1.4966895