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Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors.
- Source :
- Journal of Computational Electronics; Dec2016, Vol. 15 Issue 4, p1240-1247, 8p
- Publication Year :
- 2016
-
Abstract
- We study the impact of electron-phonon interaction on the subthreshold operation region of Tunnel-FETs by means of full-quantum simulations. Our approach is based on the nonequilibrium Green's function method, where acoustic and optical phonon scatterings are taken into account through the self-consistent Born approximation. Two device architectures are analyzed: InAs nanowire longitudinal Tunnel-FETs, and 2D vertical Tunnel-FETs based on either an GaSb/AlSb/InAs heterostructure or a MoS $$_2$$ /WTe $$_2$$ van der Waals heterojunction. In InAs nanowire Tunnel-FETs with interface traps, electron-phonon interaction deteriorates the subthreshold swing by allowing trap-assisted tunneling at energies higher than the valence-band edge in the source. In vertical heterojunction Tunnel-FETs, optical phonon scattering increases the OFF current by inducing inelastic transition in the overlap region even in the absence of traps. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15698025
- Volume :
- 15
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Computational Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 119538941
- Full Text :
- https://doi.org/10.1007/s10825-016-0900-8