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Molecular Beam Epitaxy of Zero Lattice-Mismatch InAs/GaSb Type-II Superlattice.
- Source :
- Chinese Physics Letters; Dec2016, Vol. 33 Issue 12, p1-1, 1p
- Publication Year :
- 2016
-
Abstract
- Type-II InAs/GaSb superlattices made of 13 InAs monolayers (MLs) and 7 GaSb MLs are grown on GaSb substrates by solid source molecular beam epitaxy. To obtain lattice-matched structures, thin InSb layers are inserted between InAs and GaSb layers. We complete a series of experiments to investigate the influence of the InSb deposition time, V/III beam-equivalent pressure ratio and interruption time between each layer, and then characterize the superlattice (SL) structures with high-resolution x-ray diffraction and atomic force microscopy. The optimized growth parameters are applied to grow the 100-period SL structure, resulting in the full-width half-maximum of 29.55 arcsec for the first SL satellite peak and zero lattice-mismatch between the zero-order SL peak and the GaSb substrate peak. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 33
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 120005788
- Full Text :
- https://doi.org/10.1088/0256-307X/33/12/128103