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High-efficiency Cu2ZnSn(S,Se)4 solar cells fabricated through a low-cost solution process and a two-step heat treatment.
- Source :
- Progress in Photovoltaics; Jan2017, Vol. 25 Issue 1, p58-66, 9p
- Publication Year :
- 2017
-
Abstract
- A method for fabricating high-efficiency Cu<subscript>2</subscript>ZnSn(S,Se)<subscript>4</subscript> (CZTSSe) solar cells is presented, and it is based on a non-explosive, low-cost, and simple solution process followed by a two-step heat treatment. 2-Methoxyethanol was used as a solvent, and Cu, Zn, Sn, chloride salts, and thiourea were used as solutes. A CZTSSe absorber was prepared by sulfurising and then selenising an as-coated Cu<subscript>2</subscript>ZnSnS<subscript>4</subscript> (CZTS) film. Sulfurisation in a sulfur vapour filled furnace for a long time (2 h) enhanced the crystallisation of the as-coated CZTS film and improved the stability of the CZTS precursor, and selenisation promoted further grain growth to yield a void-free CZTSSe film. Segregation of Cu and S at the grain boundaries, the absence of a fine-grain bottom layer, and the large grain size of the CZTSSe absorber were the main factors that enhanced the grain-to-grain transport of carriers and consequently the short-circuit current ( J<subscript>sc</subscript>) and efficiency. The efficiency of the CZTS solar cell was 5.0%, which increased to 10.1% after selenisation. For the 10.1% CZTSSe solar cell, the external quantum efficiency was approximately 80%, the open-circuit voltage was 450 mV, the short-circuit current was 36.5 mA/cm<superscript>2</superscript>, and the fill factor was 61.9%. Copyright © 2016 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]
- Subjects :
- SOLAR cell design
HEAT treatment
COPPER
ZINC
SULFUR
SELENIUM
METHOXYETHANOL
THIOUREA
Subjects
Details
- Language :
- English
- ISSN :
- 10627995
- Volume :
- 25
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Progress in Photovoltaics
- Publication Type :
- Academic Journal
- Accession number :
- 120173191
- Full Text :
- https://doi.org/10.1002/pip.2810