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AlO-CuO composite charge-trapping nonvolatile memory.
- Source :
- Journal of Materials Science: Materials in Electronics; Jan2017, Vol. 28 Issue 1, p928-933, 6p
- Publication Year :
- 2017
-
Abstract
- In this work, we have fabricated and thoroughly characterized dielectric-stacked memory devices with AlO-CuO composites as the charge trapping layer which are prepared by using atomic layer deposition and RF-magnetron sputtering techniques. The devices exhibit a large memory window of 13.27 V and a density of the trapped charges of 9.37 × 10 cm at a working voltage of ±11 V. The microstructural observations by using high resolution transmission electron microscopy and the analysis on X-ray photoelectron spectroscopy indicate that the strong charge-trapping ability of AlO-CuO composite should be ascribed to the occurrence of Cu, resulted by the inter-diffusion at the interface of CuO/AlO. Such an interesting composite layer has very attractive application in nonvolatile memory. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574522
- Volume :
- 28
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Journal of Materials Science: Materials in Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 120662332
- Full Text :
- https://doi.org/10.1007/s10854-016-5609-8