Partial crystallization in amorphous magnetic film induced by Ru layer interface.

Partial crystallization in amorphous magnetic film is observed in this study. The film of Co₄₆Fe₄₆Zr₅B₃/Ru/Co₄₆Fe₄₆Zr₅B₃ (CFZB/Ru/CFZB) was prepared on glass substrate by DC magnetron sputtering. The CFZB underlayer (CFZB-UL) and the CFZB overlayer (CFZB-OL) were deposited under nominally same sputtering conditions, i.e. target, working gas, working pressure, input power, and deposition duration. The transmission electron microscopy (TEM) images with fast Fourier transform (FFT) patterns revealed that the CFZB-UL was amorphous while the CFZB-OL became unexpectedly partially crystallized. The result of X-ray diffraction (XRD) spectra verified the TEM observation. The cause of the partial crystallization is attributed to the lower concentration of glass formers and the lattice matching between the overlayer and the Ru layer below. [ABSTRACT FROM AUTHOR]