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HfO2-Based Highly Stable Radiation-Immune Ferroelectric Memory.
- Source :
- IEEE Electron Device Letters; Mar2017, Vol. 38 Issue 3, p330-333, 4p
- Publication Year :
- 2017
-
Abstract
- In this letter, HfO2-based ferroelectric random access memory (FeRAM) with metal–insulator–metal structure is studied for the first time under radiation conditions. Y-doped HfO2-based FeRAM devices show high immunity to 60Co $\gamma $ ray radiation. Basic FeRAM parameters, such as leakage current, permittivity, remanent polarization, endurance, and fatigue, show almost no degradation after $\gamma $ ray radiation with a total dose as high as 12.96 Mrad (SI). Furthermore, the ferroelectric hysteresis loops show no distortion after radiation. The high stability of Y-doped HfO2 FeRAM devices under radiation demonstrates their great potential for nuclear and aerospace applications. [ABSTRACT FROM PUBLISHER]
- Subjects :
- RANDOM access memory
FERROELECTRIC RAM
RADIATION measurements
Subjects
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 38
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 121461960
- Full Text :
- https://doi.org/10.1109/LED.2017.2653848