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Localized states emission in type-I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy.
- Source :
- Physica Status Solidi - Rapid Research Letters; Mar2017, Vol. 11 Issue 3, pn/a-N.PAG, 5p
- Publication Year :
- 2017
-
Abstract
- As an important candidate for novel infrared semiconductor lasers, the optical properties of GaAsSb-based multiple quantum wells (MQWs) are crucial. The temperature- and excitation power-dependent photoluminescence (PL) spectra of the GaAs<subscript>0.92</subscript>Sb<subscript>0.08</subscript>/Al<subscript>0.2</subscript>Ga<subscript>0.8</subscript>As MQWs, which were grown by molecular beam epitaxy, were investigated and are detailed in this work. Two competitive peaks were observed from 40 K to 90 K. The peak located at the low-energy shoulder was confirmed to be localized states emission (LE) and the high-energy side peak was confirmed to be free-carrier emission by its temperature-dependent emission peak position. It is observed that the LE peak exhibited a blueshift with the increase of laser excitation power, which can be ascribed to the band filling effect of localized states. Our studies have great significance for application of GaAsSb-based MQWs in infrared semiconductor lasers. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18626254
- Volume :
- 11
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Physica Status Solidi - Rapid Research Letters
- Publication Type :
- Academic Journal
- Accession number :
- 121502427
- Full Text :
- https://doi.org/10.1002/pssr.201700001