Investigation of Self-Heating Effect on Ballistic Transport Characterization for Si FinFETs Featuring Ultrafast Pulsed IV Technique.

MLA

Cheng, Ran, et al. “Investigation of Self-Heating Effect on Ballistic Transport Characterization for Si FinFETs Featuring Ultrafast Pulsed IV Technique.” IEEE Transactions on Electron Devices, vol. 64, no. 3, Mar. 2017, pp. 909–15. EBSCOhost, https://doi.org/10.1109/TED.2016.2646907.

APA

Cheng, R., Yu, X., Chen, B., Li, J., Qu, Y., Han, J., Zhang, R., & Zhao, Y. (2017). Investigation of Self-Heating Effect on Ballistic Transport Characterization for Si FinFETs Featuring Ultrafast Pulsed IV Technique. IEEE Transactions on Electron Devices, 64(3), 909–915. https://doi.org/10.1109/TED.2016.2646907

Chicago

Cheng, Ran, Xiao Yu, Bing Chen, Junfeng Li, Yiming Qu, Jinghui Han, Rui Zhang, and Yi Zhao. 2017. “Investigation of Self-Heating Effect on Ballistic Transport Characterization for Si FinFETs Featuring Ultrafast Pulsed IV Technique.” IEEE Transactions on Electron Devices 64 (3): 909–15. doi:10.1109/TED.2016.2646907.