Low Energy Proton Irradiation Effects on Commercial Enhancement Mode GaN HEMTs.

Commercial enhancement mode GaN HEMTs are irradiated with low energy protons under different bias conditions. Negative threshold voltage ( Vth ) shifts are observed. In contrast, Vth shifts are positive under high voltage stress without proton irradiation. $C$ - V$ measurements with floating terminals are performed before and after irradiation. Both I$ - V$ and C$ - degradation. The floating terminal C-V measurements that are introduced in this study appear to be quite sensitive to traps in the AlGaN buffer layer, making this a potentially useful technique for future device characterization. [ABSTRACT FROM PUBLISHER]