Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology.

We report the first demonstration of source/drain (S/D) doping using tin (Sn) doped spin-on-glass (SOG) on Ga2O3 power MOSFET. The effectiveness of SOG doping is verified by a comparative experiment on semi-insulating Ga2O3 substrates. A specific contact resistance of \rho c= 2.1\pm 1.4\times 10^{-5}\,\,\Omega \cdot cm2 is obtained to the SOG doped layer. The thermal diffusion behavior of Sn in Ga2O3 is investigated as well. MOSFETs with SOG S/D doping is fabricated on 200-nm epitaxial Ga2O3 layer with an average effective doping of 2\times 10^17 /cm3. An increased peak output drain current density of 40 mA/mm is achieved due to reduced S/D resistance. The maximum transconductance (gm) is extracted to be 1.23 mS/mm for a device with \mathrmL_g= 2 \mu \textm . The device also shows a large ON/ OFF ratio of 10^8 and breakdown voltage of 382 V. [ABSTRACT FROM AUTHOR]