Cite
Channel width dependence of electrical characteristics of a-Si:H TFTs under bending stresses.
MLA
Hyungon Oh, et al. “Channel Width Dependence of Electrical Characteristics of A-Si:H TFTs under Bending Stresses.” Semiconductor Science & Technology, vol. 32, no. 4, Apr. 2017, p. 1. EBSCOhost, https://doi.org/10.1088/1361-6641/aa59a3.
APA
Hyungon Oh, Kyoungah Cho, & Sangsig Kim. (2017). Channel width dependence of electrical characteristics of a-Si:H TFTs under bending stresses. Semiconductor Science & Technology, 32(4), 1. https://doi.org/10.1088/1361-6641/aa59a3
Chicago
Hyungon Oh, Kyoungah Cho, and Sangsig Kim. 2017. “Channel Width Dependence of Electrical Characteristics of A-Si:H TFTs under Bending Stresses.” Semiconductor Science & Technology 32 (4): 1. doi:10.1088/1361-6641/aa59a3.