Thermoelectric Properties of BiTeSe:I Prepared by Mechanical Alloying and Hot Pressing.

BiTeSe:I ( y = 0.15-0.6 and m = 0.0025-0.01) solid solutions were prepared by mechanical alloying and hot pressing. The lattice constants that were measured from x-ray diffraction patterns decreased linearly with increasing Se content, but they were not changed remarkably by I doping. The average relative densities of the hot-pressed specimens are higher than 97%. All of the specimens exhibited n-type conductions in the measured temperature range from 323 K to 523 K, and their electrical conductivity decreased slightly with increasing temperature, indicating degenerate semiconductor behaviors. The electrical conductivity decreased with increasing Se content, whereas it was increased by I doping, and this is in contrast with the Seebeck coefficient; this resulted from the changes of the electron concentrations due to the Se substitution and the I doping. The thermal conductivity decreased with increasing Se content, and this is the result of both the decreased electronic thermal conductivity due to the decreased carrier concentration and the decreased lattice thermal conductivity due to the increased alloy scattering. The maximum dimensionless figure of merit for BiTeSe, ZT = 0.84 at 473 K, is due to its low thermal conductivity and high Seebeck coefficient. [ABSTRACT FROM AUTHOR]