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FAILURE RATE MEASUREMENT ON SILICON DIODES REVERSE POLARIZED AT HIGH TEMPERATURE.

Authors :
Osorno, D.
Sanchis-Kilders, E.
Maset, E.
Gilabert, D.
Ferreres, A.
Jord´an, J.
Esteve, V.
Gasent-Blesa, J. L.
Source :
E3S Web of Conferences; 2017, Vol. 16, p1-6, 6p, 1 Color Photograph, 1 Diagram, 1 Chart, 4 Graphs
Publication Year :
2017

Details

Language :
English
ISSN :
22671242
Volume :
16
Database :
Complementary Index
Journal :
E3S Web of Conferences
Publication Type :
Conference
Accession number :
123235158
Full Text :
https://doi.org/10.1051/e3sconf/20171611001
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