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A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes before Lasing.
- Source :
- Materials (1996-1944); May2017, Vol. 10 Issue 5, p482, 7p, 1 Diagram, 4 Graphs
- Publication Year :
- 2017
-
Abstract
- Carrier recombination behavior in c-plane GaN-based laser diodes (LDs) is numerically investigated by using the commercial software LASTIP. It is found that efficiency droop phenomenon does exist in GaN-based LDs before lasing, which is confirmed by experimental results. However, the current density corresponding to the peak efficiency of GaN-based LDs before lasing, J<subscript>max</subscript>, is nearly 40 A/cm<superscript>2</superscript>, which is much lower than that reported by other studies. The reported J<subscript>max</subscript>, measured from the cavity facet side is modulated by the absorption of quantum wells, which shifts the J<subscript>max</subscript> to a higher value. In addition, the currents due to various recombinations are calculated. It is found that Auger recombination affects the threshold current greatly, but it only plays a small role at high current injection levels. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 19961944
- Volume :
- 10
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Materials (1996-1944)
- Publication Type :
- Academic Journal
- Accession number :
- 123249229
- Full Text :
- https://doi.org/10.3390/ma10050482