Effect of Silicon Doping in InGaN/GaN Heterostructure Grown by MOCVD.

In this work the effect of Si doped InGaN/GaN heterostructure is systematically studied. The n-InGaN/GaN heterostructure are grown on c-plane sapphire substrate by horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD). The heterostructure samples are investigated by structural, optical, morphological and electrical studies using High Resolution X-ray diffraction (HRXRD), room temperature Photoluminescence (PL), Atomic Force Microscopy (AFM) and Hall measurement respectively. The composition of indium in n-InGaN/GaN heterostructure was calculated as 15.9% using epitaxy smooth fit software. The energy band gap (Eg) of the InGaN epilayer has been calculated as 2.78 eV using vigard's law. PL emission obtained at 446 nm for n-InGaN epilayer. AFM results indicate that the Si doped InGaN/GaN heterostructure has the root mean square (rms) roughness of about 0.59 nm for a scan area of 5x5 µm² which has island like growth. Moreover, Hall measurements results shows that Si doped InGaN/GaN heterostructure possess carrier concentration of 4.2 x 10¹⁸cm^-3 and mobility of 257 cm²/V s at room temperature. [ABSTRACT FROM AUTHOR]