21-4: Distinguished Paper: Experimental Decomposition of the Positive Bias Temperature Stress-induced Instability in Self-aligned Coplanar InGaZnO Thin-film Transistors and its Modeling based on the Multiple Stretched-exponential Functions.

Decomposition of the positive gate-bias temperature stress (PBTS)-induced instability into contributions of distinct mechanisms is experimentally demonstrated in top-gate self-aligned coplanar amorphous InGaZnO thin-film transistors and validated by reproducing the PBTS time-evolution of I-V characteristics through the TCAD simulation into which the extracted density-of-states and charge trapping are incorporated. [ABSTRACT FROM AUTHOR]