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AlGaN solar-blind avalanche photodiodes with AlInN/AlGaN distributed Bragg reflectors.
- Source :
- Applied Physics A: Materials Science & Processing; Jun2017, Vol. 123 Issue 6, p1-4, 4p, 1 Diagram, 4 Graphs
- Publication Year :
- 2017
-
Abstract
- AlGaN solar-blind avalanche photodiodes (APDs) with AlInN/AlGaN distributed Bragg reflectors (DBRs) operated at lower avalanche breakdown voltage are numerically demonstrated. The p-type AlGaN layer and the multiplicative layer with low Al composition are introduced to construct the polarization-induced electric field, which can significantly reduce the avalanche breakdown voltage of the APDs. Calculated results exhibit that the avalanche breakdown voltage of the designed APDs decrease by 13% compared with the conventional device structure. Simultaneously, an improved solar-blind spectral responsivity is achieved due to the inserted AlInN/AlGaN DBRs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09478396
- Volume :
- 123
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Applied Physics A: Materials Science & Processing
- Publication Type :
- Academic Journal
- Accession number :
- 123651405
- Full Text :
- https://doi.org/10.1007/s00339-017-1056-5