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Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping.
- Source :
- Advanced Materials; 6/22/2017, Vol. 29 Issue 24, pn/a-N.PAG, 7p
- Publication Year :
- 2017
Details
- Language :
- English
- ISSN :
- 09359648
- Volume :
- 29
- Issue :
- 24
- Database :
- Complementary Index
- Journal :
- Advanced Materials
- Publication Type :
- Academic Journal
- Accession number :
- 123716004
- Full Text :
- https://doi.org/10.1002/adma.201700503