GaN Nanowire n-MOSFET With 5 nm Channel Length for Applications in Digital Electronics.

MLA

Chowdhury, Nadim, et al. “GaN Nanowire N-MOSFET With 5 Nm Channel Length for Applications in Digital Electronics.” IEEE Electron Device Letters, vol. 38, no. 7, July 2017, pp. 859–62. EBSCOhost, https://doi.org/10.1109/LED.2017.2703953.

APA

Chowdhury, N., Iannaccone, G., Fiori, G., Antoniadis, D. A., & Palacios, T. (2017). GaN Nanowire n-MOSFET With 5 nm Channel Length for Applications in Digital Electronics. IEEE Electron Device Letters, 38(7), 859–862. https://doi.org/10.1109/LED.2017.2703953

Chicago

Chowdhury, Nadim, Giuseppe Iannaccone, Gianluca Fiori, Dimitri A. Antoniadis, and Tomas Palacios. 2017. “GaN Nanowire N-MOSFET With 5 Nm Channel Length for Applications in Digital Electronics.” IEEE Electron Device Letters 38 (7): 859–62. doi:10.1109/LED.2017.2703953.